Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

We propose and numerically simulate novel reconfigurable logic gatesemploying spin metal-oxide-semiconductor field-effect transistors (spinMOSFETs). The output characteristics of the spin MOSFETs depend on the relativemagnetization configuration of the ferromagnetic contacts for the source anddrain, that is, high current-drive capability in the parallel magnetization andlow current-drive capability in the antiparallel magnetization [S. Sugahara andM. Tanaka: Appl. Phys. Lett. 84 (2004) 2307]. A reconfigurable NAND/NOR logicgate can be realized by using a spin MOSFET as a driver or an active load of acomplimentary MOS (CMOS) inverter with a neuron MOS input stage. Its logicfunction can be switched by changing the relative magnetization configurationof the ferromagnetic source and drain of the spin MOSFET. A reconfigurablelogic gate for all symmetric Boolean functions can be configured using onlyfive CMOS inverters including four spin MOSFETs. The operation of thesereconfigurable logic gates was confirmed by numerical simulations using asimple device model for the spin MOSFETs